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                    HgCdTe(MCT)多通道檢測模塊

                    簡(jiǎn)要描述:HgCdTe(MCT)多通道檢測模塊提供針對不同波長(cháng)的四象限和多元線(xiàn)陣探測器模塊,基于HgCdTe材料,集成了跨阻抗、直流耦合四通道前置放大器、TE制冷和風(fēng)扇。

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                    • 更新時(shí)間:2023-08-20
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                    HgCdTe(MCT)多通道檢測模塊

                    VIGO Photonics 提供針對不同波長(cháng)的四象限和多元線(xiàn)陣探測器模塊,基于HgCdTe材料,集成了跨阻抗、直流耦合四通道前置放大器、TE制冷和風(fēng)扇。四象限模塊適合用于測量光束的移動(dòng)或作為對準系統的反饋;多元線(xiàn)陣探測器多用于非接觸式的溫度測量,常用于鐵路運輸。除標準5μm和10.6μm模塊,根據不同應場(chǎng)景,可接受定制。


                    四象限模塊

                    1、QM-5,四象限,制冷模塊,光敏面4×(0.2×0.2)

                    Specification (Ta = 20°C)
                    ParameterTypical value
                    Optical characteristics
                    Cut-on wavelength λcut-on (10%), µm3.5±0.5
                    Peak wavelength λpeak, µm4.5±0.5
                    Optimum wavelength λopt, µm5
                    Cut-off wavelength λcut-off (10%), µm6.0±0.5
                    Detectivity D*(λpeak), cm·Hz1/2/W≥7.0×109
                    Detectivity D*(λopt), cm·Hz1/2/W≥6.8×109
                    Output noise density vn(100 kHz), nV/Hz1/2≤500
                    Electrical parameters
                    Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W≥1.7×105
                    Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W≥1.6×105
                    Low cut-off frequency flo, HzDC
                    High cut-off frequency fhi, Hz≥1M
                    Output impedance Rout, Ω50
                    Output voltage swing Vout (RL = 1 MΩ*)), V0 – 4
                    Output voltage offset Voff, mVmax ±20
                    Power supply voltage Vsup, VDC7.5
                    Power consumption, Wmax 6
                    Other information
                    Active elements materialepitaxial HgCdTe heterostructure
                    Active areas A, mm×mm4×(0.2×0.2)
                    Distance between active elements, mm0.02
                    WindowpSiAR
                    Acceptance angle Φ~70°
                    Ambient operating temperature Ta, °C10 to 30
                    Signal output sockets4×MCX
                    Power supply socketDC 2.1/5.5
                    Mounting holeM4
                    Fanyes

                    2、QM-10.6,四象限,非制冷模塊,光敏面4×(1×1)

                    Specification (Ta = 20°C)
                    ParameterTypical value
                    Optical characteristics
                    Cut-on wavelength λcut-on (10%), µm3.0±1.0
                    Peak wavelength λpeak, µm8.0±2.0
                    Optimum wavelength λopt, µm10.6
                    Cut-off wavelength λcut-off (10%), µm12.0±1.0
                    Detectivity D*(λpeak), cm·Hz1/2/W≥1.0×107
                    Detectivity D*(λopt), cm·Hz1/2/W≥4.5×106
                    Output noise density vn(100 kHz) µV/Hz1/2≤4.5
                    Electrical parameters
                    Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W≥2.2×102
                    Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W≥1.1×102
                    Low cut-off frequency flo, HzDC
                    High cut-off frequency fhi, Hz≥1M
                    Output impedance Rout, Ω50
                    Output voltage swing Vout(RL = 1 MΩ*)), V0 – 4
                    Output voltage offset Voff, mVmax ±20
                    Power supply voltage Vsup, VDC7.5
                    Power consumption, Wmax 6
                    Other information
                    Active elements materialepitaxial HgCdTe heterostructure
                    Active areas A, mm×mm4×(1×1)
                    Distance between active elements, mm0.15±0.1
                    Windownone
                    Acceptance angle Φ~70°
                    Ambient operating temperature Ta, °C10 to 30
                    Signal output sockets4×MCX
                    Power supply socketDC 2.1/5.5
                    Mounting holeM4
                    Fanyes


                    HgCdTe(MCT)多通道檢測模塊多元線(xiàn)陣模塊

                    1、4EM-5,1×4線(xiàn)陣,制冷模塊,光敏面4×(0.2×0.2)

                    Specification (Ta = 20°C)
                    ParameterTypical value
                    Optical characteristics
                    Cut-on wavelength λcut-on (10%), µm3.5±0.5
                    Peak wavelength λpeak, µm4.5±0.5
                    Optimum wavelength λopt, µm5
                    Cut-off wavelength λcut-off (10%), µm6.0±0.5
                    Detectivity D*(λpeak), cm·Hz1/2/W≥7.0×109
                    Detectivity D*(λopt), cm·Hz1/2/W≥6.8×109
                    Output noise density vn(100 kHz), nV/Hz1/2≤500
                    Electrical parameters
                    Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W≥1.7×105
                    Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W≥1.6×105
                    Low cut-off frequency flo, HzDC
                    High cut-off frequency fhi, Hz≥1M
                    Output impedance Rout, Ω50
                    Output voltage swing Vout (RL = 1 MΩ*)), V0 – 4
                    Output voltage offset Voff, mVmax ±20
                    Power supply voltage Vsup, VDC7.5
                    Power consumption, Wmax 6
                    Other information
                    Active elements materialepitaxial HgCdTe heterostructure
                    Active areas A, mm×mm4×(0.2×0.2)
                    Distance between active elements, mm0.05
                    WindowpSiAR
                    Acceptance angle Φ~70°
                    Ambient operating temperature Ta, °C10 to 30
                    Signal output sockets4×MCX
                    Power supply socketDC 2.1/5.5
                    Mounting holeM4
                    Fanyes

                    2、4EM-5,1×32線(xiàn)陣,制冷模塊,光敏面4×(0.2×0.2)

                    Specification (Ta = 20°C, Vb = 0 mV)Detection module type
                    Parameter
                    32EM-5-0132EM-5-02
                    Optical characteristics
                    Cut-on wavelength λcut-on (10%), µm≤2.03.7±0.2
                    Peak wavelength λpeak, µm4.25±0.24.75±0.2
                    Optimal wavelength λopt, µm55
                    Cut-off wavelength λcut-off (10%), µm5.6±0.25.8±0.2
                    Detectivity D*(λpeak), cm·Hz1/2/W≥3.5×109≥2.4×109
                    Detectivity D*(λopt), cm·Hz1/2/W≥2.2×109≥2.2×109
                    Electrical parameters
                    Voltage responsivity Rv(λpeak, RLoad = 1 MΩ), V/W≥3.5×104≥5.0×104
                    Voltage responsivity Rv(λopt, RLoad = 1 MΩ), V/W≥2.2×104≥4.6×104
                    Low cut-off frequency flo, HzDCDC
                    High cut-off frequency fhi, kHz≥400≥650
                    Output impedance Rout, Ω5050
                    Output voltage swing Vout (RLoad = 1 MΩ), V-1
                    (negative output)
                    -1
                    (negative output)
                    Output voltage offset Voff, mVDCmax -200max -200
                    Power supply voltage Vsup, VDC55
                    Other information
                    Active elements materialepitaxial HgCdTe heterostructure
                    Number of elements1×32 linear array
                    Active area of single element A, mm×mm0.125×10.1×0.1
                    Distance between active elements, µm2550
                    WindowpAl2O3AR
                    Acceptance angle Φ~70°
                    Ambient operating temperature Ta, °C10 to 30

                    應用領(lǐng)域

                    • CO2激光(10.6µm)測量

                    • 激光功率監控,激光束輪廓和定位

                    • 激光校準

                    • 光譜學(xué)(氣體檢測,呼吸分析)

                    • 慢速和快速非接觸式溫度測量(鐵路運輸、工業(yè)和實(shí)驗室過(guò)程監控)

                    • 光學(xué)分揀系統

                    • 激光束輪廓和定位

                    • 火焰和爆炸檢測

                    • 國防和安全

                    • 燃燒過(guò)程控制




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